*For representation only.
NSVMMBT6429LT1G
| Mfr. No: | NSVMMBT6429LT1G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN Bipolar Trnsistr |
| Lifecycle: | Active |
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Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100µA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 700MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,943
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
The NSVMMBT6429LT1G, made by onsemi, belongs to the transistors product category. Technical specifications for this part include transistor type: NPN, current, collector (ic): 200 mA, voltage, collector emitter breakdown: 45 V, vce saturation (max) @ ib, ic: 600mV @ 5mA, 100mA, current, collector cutoff: 100nA and DC current gain (hfe) (min) @ ic, vce: 500 @ 100µA, 5V. This part has a typical lead time of 294 Days from factory. Simplytronix stocks NSVMMBT6429LT1G for same-day shipping with genuine parts guaranteed.
