*For representation only.
NSVMMBTA05LT1G
| Mfr. No: | NSVMMBTA05LT1G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT SS SOT23 DR XSTR NPN |
| Lifecycle: | Active |
⚙
Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Power - Max | 225 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
8,461
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
The NSVMMBTA05LT1G from onsemi falls under the transistors category. Among its key specs are transistor type: NPN, current, collector (ic): 500 mA, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 250mV @ 10mA, 100mA, current, collector cutoff: 100nA and DC current gain (hfe) (min) @ ic, vce: 100 @ 100mA, 1V. This part has a typical lead time of 294 Days from factory. NSVMMBTA05LT1G is available through Simplytronix, sourced and verified for authenticity.
