*For representation only.
NSVMSD1819A-RT1G
| Mfr. No: | NSVMSD1819A-RT1G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT SS SC70 GP XSTR NPN 50V |
| Lifecycle: | Active |
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Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
| Power - Max | 150 mW |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SC-70-3 (SOT323) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
727
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 217 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
The NSVMSD1819A-RT1G from onsemi falls under the transistors category. Key specifications include transistor type: NPN, current, collector (ic): 100 mA, voltage, collector emitter breakdown: 50 V, vce saturation (max) @ ib, ic: 500mV @ 10mA, 100mA, current, collector cutoff: 100nA and DC current gain (hfe) (min) @ ic, vce: 210 @ 2mA, 10V. This part has a typical lead time of 217 Days from factory. NSVMSD1819A-RT1G is available through Simplytronix, sourced and verified for authenticity.
