Similar Products
| Mfr. No: | NSVMSD601-RT1G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT SS SC59 GP XSTR NPN PB FR |
| Lifecycle: | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
| Power - Max | 200 mW |
| Frequency - Transition | - |
| Operating Temperature | - |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SC-59 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 77 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210095 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
onsemi manufactures the NSVMSD601-RT1G, a transistors part used in electronic assemblies. Notable characteristics of this part include transistor type: NPN, current, collector (ic): 100 mA, voltage, collector emitter breakdown: 50 V, vce saturation (max) @ ib, ic: 500mV @ 10mA, 100mA, current, collector cutoff: 100nA and DC current gain (hfe) (min) @ ic, vce: 210 @ 2mA, 10V. This part has a typical lead time of 77 Days from factory. You can source NSVMSD601-RT1G through Simplytronix, with fast shipping and verified authenticity.
