*For representation only.
NSVMUN5116T1G
| Mfr. No: | NSVMUN5116T1G |
| Mfr.: | onsemi |
| Category: | Digital Transistors |
| Description: | Digital Transistors SMALL SIGNAL BIAS RESISTOR TRANSISTOR PNP 50 V |
| Lifecycle: | Active |
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Specifications
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 Only |
| Resistor - Base (R1) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 202 mW |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SC-70-3 (SOT323) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
4,015
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 217 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
NSVMUN5116T1G is a transistors component manufactured by onsemi. It features transistor type: PNP - Pre-Biased, current, collector (ic): 100 mA, voltage, collector emitter breakdown: 50 V, resistors included: R1 Only, resistor, base: 4.7 kOhms and DC current gain (hfe) (min) @ ic, vce: 160 @ 5mA, 10V. This part has a typical lead time of 217 Days from factory. Simplytronix offers NSVMUN5116T1G in stock, verified authentic and ready for same-day dispatch.
