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| Mfr. No: | NSVTB60BDW1T1G |
| Mfr.: | onsemi |
| Category: | Digital Transistors |
| Description: | Digital Transistors PNP GENERAL PURPOSE |
| Lifecycle: | Active |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 250mW |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
onsemi manufactures the NSVTB60BDW1T1G, a transistors part used in electronic assemblies. Technical specifications for this part include transistor type: 1 NPN Pre-Biased, 1 PNP, current, collector (ic): 150mA, voltage, collector emitter breakdown: 50V, resistor, base: 22kOhms, resistor, emitter base: 47kOhms and DC current gain (hfe) (min) @ ic, vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V. This part has a typical lead time of 294 Days from factory. You can source NSVTB60BDW1T1G through Simplytronix, with fast shipping and verified authenticity.
