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NTBG032N065M3S onsemi
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NTBG032N065M3S

Mfr. No: NTBG032N065M3S
Mfr.: onsemi
Category: SiC MOSFETs
Description: SiC MOSFETs SIC MOS D2PAK-7L 32MOHM 650V M3S
Datasheet: NTBG032N065M3S Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 44mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1409 pF @ 400 V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,050
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 238 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

onsemi's NTBG032N065M3S is a widely used sic mosfets part in electronic designs. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 52A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 44mOhm @ 15A, 18V. This part has a typical lead time of 238 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies NTBG032N065M3S with same-day shipping and guaranteed authenticity.

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