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NTBG045N065SC1 onsemi
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NTBG045N065SC1

Mfr. No: NTBG045N065SC1
Mfr.: onsemi
Category: SiC MOSFETs
Description: SiC MOSFETs SIC MOS D2PAK-7L 650V
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 4.3V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 325 V
FET Feature -
Power Dissipation (Max) 242W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,688
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

NTBG045N065SC1 is a sic mosfets part produced by onsemi for use across a range of applications. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 62A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 50mOhm @ 25A, 18V. This part has a typical lead time of 112 Days from factory. Order NTBG045N065SC1 from Simplytronix for authenticated stock and same-day order processing.

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