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NTD6415ANLT4G onsemi
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NTD6415ANLT4G

Mfr. No: NTD6415ANLT4G
Mfr.: onsemi
Category: MOSFETs
Description: MOSFETs 100V HD3E NCH
Lifecycle: Active
Datasheet: NTD6415ANLT4G Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1024 pF @ 25 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,074
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 133 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The NTD6415ANLT4G, made by onsemi, belongs to the mosfets product category. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 23A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 52mOhm @ 10A, 10V. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks NTD6415ANLT4G for same-day shipping with genuine parts guaranteed.

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