*For representation only.
NTGD4167CT1G
| Mfr. No: | NTGD4167CT1G |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs COMP 30V 2.9A 0.090 TSOP6 |
| Datasheet: | NTGD4167CT1G Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A, 1.9A |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 295pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
7,836
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
onsemi's NTGD4167CT1G is a widely used mosfets part in electronic designs. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: N and P-Channel, FET feature: Logic Level Gate, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 2.6A, 1.9A and rds on (max) @ id, vgs: 90mOhm @ 2.6A, 4.5V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies NTGD4167CT1G with same-day shipping and guaranteed authenticity.
