*For representation only.
NTH4L080N120SC1
| Mfr. No: | NTH4L080N120SC1 |
| Mfr.: | onsemi |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SIC MOS TO247-4L 80MOHM 1200V |
| Lifecycle: | Active |
⚙
Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
4,817
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 308 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by onsemi, the NTH4L080N120SC1 is classified under sic mosfets. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 29A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 110mOhm @ 20A, 20V. This part has a typical lead time of 308 Days from factory. Get NTH4L080N120SC1 from Simplytronix, shipped same day with a genuine parts guarantee.
