| Mfr. No: | NTMFD0D9N02P1E |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs IFET 25V 0.9 MOHM PQFN56MP |
| Lifecycle: | Last Time Buy |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V, 25V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 340µA, 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 9nC, 30nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V, 5050pF @ 13V |
| Power - Max | 960mW (Ta), 1.04W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PQFN (5x6) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | |
| Suggested Replacement | NTMFD1D1N02X |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 365 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
NTMFD0D9N02P1E is a mosfets part produced by onsemi for use across a range of applications. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual) Asymmetrical, FET feature: -, drain to source voltage: 30V, 25V, current, continuous drain (id) @ 25°C: 14A (Ta), 30A (Ta) and rds on (max) @ id, vgs: 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V. This part has a typical lead time of 365 Days from factory. Order NTMFD0D9N02P1E from Simplytronix for authenticated stock and same-day order processing.