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NTR5198NLT1G onsemi
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NTR5198NLT1G

Mfr. No: NTR5198NLT1G
Mfr.: onsemi
Category: MOSFETs
Description: MOSFETs Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
Datasheet: NTR5198NLT1G Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 155mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 182 pF @ 25 V
FET Feature -
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging NTR5198NLT3G
Suggested Replacement
14,569
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 350 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

NTR5198NLT1G is a mosfets part produced by onsemi for use across a range of applications. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 1.7A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 155mOhm @ 1A, 10V. This part has a typical lead time of 350 Days from factory and ships with a full manufacturer datasheet available for download. Order NTR5198NLT1G from Simplytronix for authenticated stock and same-day order processing.

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