| Mfr. No: | NTZD5110NT1G |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH |
| Lifecycle: | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 294mA |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 24.5pF @ 20V |
| Power - Max | 250mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 350 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210095 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
NTZD5110NT1G is a mosfets part produced by onsemi for use across a range of applications. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 294mA and rds on (max) @ id, vgs: 1.6Ohm @ 500mA, 10V. This part has a typical lead time of 350 Days from factory. Order NTZD5110NT1G from Simplytronix for authenticated stock and same-day order processing.