| Mfr. No: | NVH4L015N065SC1 |
| Mfr.: | onsemi |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SIC MOS TO247-4L 650V |
| Datasheet: | NVH4L015N065SC1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 142A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 75A, 18V |
| Vgs(th) (Max) @ Id | 4.3V @ 25mA |
| Gate Charge (Qg) (Max) @ Vgs | 283 nC @ 18 V |
| Vgs (Max) | +22V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 4790 pF @ 325 V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 308 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by onsemi, the NVH4L015N065SC1 is classified under sic mosfets. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 142A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 18mOhm @ 75A, 18V. This part has a typical lead time of 308 Days from factory and ships with a full manufacturer datasheet available for download. Get NVH4L015N065SC1 from Simplytronix, shipped same day with a genuine parts guarantee.