*For representation only.
NVMFD5C650NLET1G
| Mfr. No: | NVMFD5C650NLET1G |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs T6 60V LL S08FL DS |
| Datasheet: | NVMFD5C650NLET1G Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 111A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 98µA |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2546pF @ 25V |
| Power - Max | 3.5W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1500 |
4,107
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 210 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
As a mosfets component, the NVMFD5C650NLET1G is manufactured and supplied by onsemi. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel, FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 21A (Ta), 111A (Tc) and rds on (max) @ id, vgs: 4.2mOhm @ 20A, 10V. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries NVMFD5C650NLET1G in stock, backed by a genuine parts guarantee and quick dispatch.
