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NVMFD5C650NLWFT1G onsemi
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NVMFD5C650NLWFT1G

Mfr. No: NVMFD5C650NLWFT1G
Mfr.: onsemi
Category: MOSFETs
Description: MOSFETs T6 60V LL S08FL DS
Datasheet: NVMFD5C650NLWFT1G Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 98µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2546pF @ 25V
Power - Max 3.5W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,355
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 329 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8542390000
USHTS 8541290065
JPHTS 8541290100
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
ℹ Product Overview

NVMFD5C650NLWFT1G is a mosfets component manufactured by onsemi. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 21A (Ta), 111A (Tc) and rds on (max) @ id, vgs: 4.2mOhm @ 20A, 10V. This part has a typical lead time of 329 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers NVMFD5C650NLWFT1G in stock, verified authentic and ready for same-day dispatch.

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