*For representation only.
NVMFWD027N10MCLT1G
| Mfr. No: | NVMFWD027N10MCLT1G |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs PTNG 100V LL SO8FL DUAL |
⚙
Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 38µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 50V |
| Power - Max | 3.1W (Ta), 46W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1500 |
4,027
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 308 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The NVMFWD027N10MCLT1G from onsemi falls under the mosfets category. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 7.4A (Ta), 28A (Tc) and rds on (max) @ id, vgs: 26mOhm @ 7A, 10V. This part has a typical lead time of 308 Days from factory. NVMFWD027N10MCLT1G is available through Simplytronix, sourced and verified for authenticity.
