*For representation only.
NVMYS029N08LHTWG
| Mfr. No: | NVMYS029N08LHTWG |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs T8 80V LL LFPAK |
| Datasheet: | NVMYS029N08LHTWG Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 431 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK4 (5x6) |
| Package / Case | SOT-1023, 4-LFPAK |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
13,965
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | 210 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290040 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The NVMYS029N08LHTWG, made by onsemi, belongs to the mosfets product category. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 7A (Ta), 22A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 29mOhm @ 5A, 10V. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks NVMYS029N08LHTWG for same-day shipping with genuine parts guaranteed.
