*For representation only.
NVXK2TR40WXT
| Mfr. No: | NVXK2TR40WXT |
| Mfr.: | onsemi |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules APM32 SIC H-BRIDGE POWER MODULE |
| Lifecycle: | Active |
⚙
Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 35A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 106nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1789pF @ 800V |
| Power - Max | 319W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | 32-PowerDIP Module (1.311", 33.30mm) |
| Supplier Device Package | APM32 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 60 |
3,192
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 147 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The NVXK2TR40WXT from onsemi falls under the mosfet modules category. Among its key specs are technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 27A (Tc) and rds on (max) @ id, vgs: 59mOhm @ 35A, 20V. This part has a typical lead time of 147 Days from factory. NVXK2TR40WXT is available through Simplytronix, sourced and verified for authenticity.
