*For representation only.
NXH004P120M3F2PTNG
| Mfr. No: | NXH004P120M3F2PTNG |
| Mfr.: | onsemi |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1200V 4M M3S SIC HALFBRIDGE WITH SI3N4 DBC IN F2 MODULES |
| Lifecycle: | Active |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 338A (Tj) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 200A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 120mA |
| Gate Charge (Qg) (Max) @ Vgs | 876nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 16410pF @ 800V |
| Power - Max | 1100W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | 36-PIM (56.7x62.8) |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 20 |
5,488
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 70 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
NXH004P120M3F2PTNG is a mosfet modules part produced by onsemi for use across a range of applications. This component is defined by technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 338A (Tj) and rds on (max) @ id, vgs: 5.5mOhm @ 200A, 18V. This part has a typical lead time of 70 Days from factory. Order NXH004P120M3F2PTNG from Simplytronix for authenticated stock and same-day order processing.
