*For representation only.
NXH006P120M3F1PG
| Mfr. No: | NXH006P120M3F1PG |
| Mfr.: | onsemi |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package |
| Lifecycle: | Active |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 120A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 80mA |
| Gate Charge (Qg) (Max) @ Vgs | 622nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13715pF @ 800V |
| Power - Max | 333W (Tc) |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty |
6,837
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 217 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
NXH006P120M3F1PG is a mosfet modules part produced by onsemi for use across a range of applications. Key specifications include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 200A (Tc) and rds on (max) @ id, vgs: 9mOhm @ 120A, 18V. This part has a typical lead time of 217 Days from factory. Order NXH006P120M3F1PG from Simplytronix for authenticated stock and same-day order processing.
