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NXH008P120M3F1PG onsemi
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NXH008P120M3F1PG

Mfr. No: NXH008P120M3F1PG
Mfr.: onsemi
Category: MOSFET Modules
Description: MOSFET Modules 8M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE
Lifecycle: Active
Datasheet: NXH008P120M3F1PG Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 145A (Tc)
Rds On (Max) @ Id, Vgs 10.9mOhm @ 120A, 18V
Vgs(th) (Max) @ Id 4.4V @ 60mA
Gate Charge (Qg) (Max) @ Vgs 419nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 8334pF @ 800V
Power - Max 382W (Tj)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 28
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,209
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 189 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8542390070
ECCN EAR99
ℹ Product Overview

As a mosfet modules component, the NXH008P120M3F1PG is manufactured and supplied by onsemi. Key specifications include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 145A (Tc) and rds on (max) @ id, vgs: 10.9mOhm @ 120A, 18V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries NXH008P120M3F1PG in stock, backed by a genuine parts guarantee and quick dispatch.

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