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NXH011F120M3F2PTHG

Mfr. No: NXH011F120M3F2PTHG
Mfr.: onsemi
Category: MOSFET Modules
Description: MOSFET Modules 11M 1200V 40A M3S SIC FULL BRIDGE MODULE
Lifecycle: Active
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Full Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 105A (Tc)
Rds On (Max) @ Id, Vgs 16mOhm @ 100A, 18V
Vgs(th) (Max) @ Id 4.4V @ 60mA
Gate Charge (Qg) (Max) @ Vgs 284nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 6211.6pF @ 800V
Power - Max 244W (Tj)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 34-PIM (56.7x42.5)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 20
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,040
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 70 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

onsemi manufactures the NXH011F120M3F2PTHG, a mosfet modules part used in electronic assemblies. Notable characteristics of this part include technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 105A (Tc) and rds on (max) @ id, vgs: 16mOhm @ 100A, 18V. This part has a typical lead time of 70 Days from factory. You can source NXH011F120M3F2PTHG through Simplytronix, with fast shipping and verified authenticity.

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