| Mfr. No: | NXH020F120MNF1PG |
| Mfr.: | onsemi |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules PIM F1 SIC FULL BRIDGE 1200V 20MOHM |
| Lifecycle: | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 50A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 213.5nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2420pF @ 800V |
| Power - Max | 119W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | 22-PIM (33.8x42.5) |
| Packaging | Tray |
| Standard Pack Qty | 28 |
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | |
| Lead Time | 329 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8542390070 |
| ECCN | EAR99 |
The NXH020F120MNF1PG, made by onsemi, belongs to the mosfet modules product category. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 51A (Tc) and rds on (max) @ id, vgs: 30mOhm @ 50A, 20V. This part has a typical lead time of 329 Days from factory. Simplytronix stocks NXH020F120MNF1PG for same-day shipping with genuine parts guaranteed.