*For representation only.
NXH040F120MNF1PG
| Mfr. No: | NXH040F120MNF1PG |
| Mfr.: | onsemi |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules PIM F1 SIC FULL BRIDGE 1200V 40MOHM |
| Lifecycle: | Active |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 25A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 122.1nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1505pF @ 800V |
| Power - Max | 74W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | 22-PIM (33.8x42.5) |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 28 |
14,674
Units In Stock
📦 Tray
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- Global shipping
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Test report available upon request —
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Key Specifications
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | |
| Lead Time | 329 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8542390070 |
| ECCN | EAR99 |
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Product Overview
NXH040F120MNF1PG is a mosfet modules part produced by onsemi for use across a range of applications. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 4 N-Channel, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 30A (Tc) and rds on (max) @ id, vgs: 56mOhm @ 25A, 20V. This part has a typical lead time of 329 Days from factory. Order NXH040F120MNF1PG from Simplytronix for authenticated stock and same-day order processing.
