| Mfr. No: | SBC847BPDXV6T1G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V |
| Lifecycle: | Active |
| Transistor Type | 1 NPN, 1 PNP |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Power - Max | 357mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 357 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
SBC847BPDXV6T1G is a bipolar transistors - bjt component manufactured by onsemi. Notable characteristics of this part include transistor type: 1 NPN, 1 PNP, current, collector (ic): 100mA, voltage, collector emitter breakdown: 45V, vce saturation (max) @ ib, ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA, current, collector cutoff: 15nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 200 @ 2mA, 5V. This part has a typical lead time of 357 Days from factory. Simplytronix offers SBC847BPDXV6T1G in stock, verified authentic and ready for same-day dispatch.