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SBC847BWT1G onsemi
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SBC847BWT1G

Mfr. No: SBC847BWT1G
Mfr.: onsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SSP XSTR SC-70 NPN
Datasheet: SBC847BWT1G Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 150 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,368
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 308 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

onsemi's SBC847BWT1G is a widely used bipolar transistors - bjt part in electronic designs. It features transistor type: NPN, current, collector (ic): 100 mA, voltage, collector emitter breakdown: 45 V, vce saturation (max) @ ib, ic: 600mV @ 5mA, 100mA, current, collector cutoff: 15nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 200 @ 2mA, 5V. This part has a typical lead time of 308 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SBC847BWT1G with same-day shipping and guaranteed authenticity.

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