*For representation only.
UF3C120080B7S
| Mfr. No: | UF3C120080B7S |
| Mfr.: | onsemi |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V/80MOSICFETG3TO263-7 |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 28.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 12 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 754 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
3,710
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 147 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
The UF3C120080B7S from onsemi falls under the sic mosfets category. This component is defined by FET type: N-Channel, technology: SiCFET (Cascode SiCJFET), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 28.8A (Tc), rds on (max) @ id, vgs: 105mOhm @ 20A, 12V and vgs(th) (max) @ id: 6V @ 10mA. This part has a typical lead time of 147 Days from factory. UF3C120080B7S is available through Simplytronix, sourced and verified for authenticity.
