*For representation only.
UFB25SC12E1BC3N
| Mfr. No: | UFB25SC12E1BC3N |
| Mfr.: | onsemi |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules 1200V/25ASICFULL-BRIDGE |
| Lifecycle: | Active |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 P-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tj) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 42.5nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 800V |
| Power - Max | 114W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 24 |
14,404
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 266 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
onsemi manufactures the UFB25SC12E1BC3N, a discrete semiconductor modules part used in electronic assemblies. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 4 P-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 36A (Tj) and rds on (max) @ id, vgs: 45mOhm @ 25A, 12V. This part has a typical lead time of 266 Days from factory. You can source UFB25SC12E1BC3N through Simplytronix, with fast shipping and verified authenticity.
