| Mfr. No: | UHB50SC12E1BC3N |
| Mfr.: | onsemi |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules 1200V/50ASICHALF-BRIDGE |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 P-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tj) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 2930pF @ 800V |
| Power - Max | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Packaging | Tray |
| Standard Pack Qty | 24 |
| Alternate Packaging | |
| Suggested Replacement | NXH015P12M3F1PTG |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 266 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The UHB50SC12E1BC3N from onsemi falls under the discrete semiconductor modules category. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 2 P-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 69A (Tj) and rds on (max) @ id, vgs: 24mOhm @ 50A, 12V. This part has a typical lead time of 266 Days from factory. UHB50SC12E1BC3N is available through Simplytronix, sourced and verified for authenticity.