| Mfr. No: | 2N3055G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 15A 60V |
| Datasheet: | 2N3055G Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Power - Max | 115 W |
| Frequency - Transition | 2.5MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| Supplier Device Package | TO-204 (TO-3) |
| Packaging | Tray |
| Standard Pack Qty | 100 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 133 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
onsemi manufactures the 2N3055G, a bipolar transistors - bjt part used in electronic assemblies. Key specifications include transistor type: NPN, current, collector (ic): 15 A, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 3V @ 3.3A, 10A, current, collector cutoff: 700µA and DC current gain (hfe) (min) @ ic, vce: 20 @ 4A, 4V. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N3055G through Simplytronix, with fast shipping and verified authenticity.