*For representation only.
2N5192G
| Mfr. No: | 2N5192G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 4A 80V 40W NPN |
| Datasheet: | 2N5192G Datasheet (PDF) |
⚙
Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V |
| Power - Max | 40 W |
| Frequency - Transition | 2MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126 |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
9,755
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 98 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by onsemi, the 2N5192G is classified under bipolar transistors - bjt. Key specifications include transistor type: NPN, current, collector (ic): 4 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 1.4V @ 1A, 4A, current, collector cutoff: 1mA and DC current gain (hfe) (min) @ ic, vce: 20 @ 1.5A, 2V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Get 2N5192G from Simplytronix, shipped same day with a genuine parts guarantee.
