| Mfr. No: | BD135G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 1.5A 45V 12.5W NPN |
| Datasheet: | BD135G Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Power - Max | 1.25 W |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126 |
| Packaging | Bulk |
| Standard Pack Qty | 500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 133 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
As a bipolar transistors - bjt component, the BD135G is manufactured and supplied by onsemi. Technical specifications for this part include transistor type: NPN, current, collector (ic): 1.5 A, voltage, collector emitter breakdown: 45 V, vce saturation (max) @ ib, ic: 500mV @ 50mA, 500mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 40 @ 150mA, 2V. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BD135G in stock, backed by a genuine parts guarantee and quick dispatch.