*For representation only.
BD237G
| Mfr. No: | BD237G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 2A 80V 25W NPN |
| Lifecycle: | Active |
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Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 2V |
| Power - Max | 25 W |
| Frequency - Transition | 3MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
10,844
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
The BD237G from onsemi falls under the bipolar transistors - bjt category. It features transistor type: NPN, current, collector (ic): 2 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 600mV @ 100mA, 1A, current, collector cutoff: 100µA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 25 @ 1A, 2V. This part has a typical lead time of 112 Days from factory. BD237G is available through Simplytronix, sourced and verified for authenticity.
