*For representation only.
ECH8697R-TL-W
| Mfr. No: | ECH8697R-TL-W |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs NCH 2.5V COMMON-DRAIN |
| Datasheet: | ECH8697R-TL-W Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.5W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Leads |
| Supplier Device Package | SOT-28FL/ECH8 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
11,040
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 119 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
ECH8697R-TL-W is a mosfets part produced by onsemi for use across a range of applications. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual) Common Drain, FET feature: Logic Level Gate, 2.5V Drive, drain to source voltage: 24V, current, continuous drain (id) @ 25°C: 10A and rds on (max) @ id, vgs: 11.6mOhm @ 5A, 4.5V. This part has a typical lead time of 119 Days from factory and ships with a full manufacturer datasheet available for download. Order ECH8697R-TL-W from Simplytronix for authenticated stock and same-day order processing.
