*For representation only.
FDC6561AN
| Mfr. No: | FDC6561AN |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs SSOT-6 N-CH 30V |
| Datasheet: | FDC6561AN Datasheet (PDF) |
⚙
Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT™-6 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,778
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 70 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541299000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
As a mosfets component, the FDC6561AN is manufactured and supplied by onsemi. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 2.5A and rds on (max) @ id, vgs: 95mOhm @ 2.5A, 10V. This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries FDC6561AN in stock, backed by a genuine parts guarantee and quick dispatch.
