| Mfr. No: | FFSB20120A |
| Mfr.: | onsemi |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes SIC TO263 SBD 20A 1 200V |
| Datasheet: | FFSB20120A Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 32A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 20 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Capacitance @ Vr, F | 1220pF @ 1V, 100KHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
onsemi manufactures the FFSB20120A, a sic schottky diodes part used in electronic assemblies. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 32A, voltage, forward (vf) (max) @ if: 1.75 V @ 20 A, speed: Fast Recovery =< 500ns, > 200mA (Io) and current, reverse leakage @ vr: 200 µA @ 1200 V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. You can source FFSB20120A through Simplytronix, with fast shipping and verified authenticity.