*For representation only.
FFSH20120A-F155
| Mfr. No: | FFSH20120A-F155 |
| Mfr.: | onsemi |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D1, TO-247-2L |
| Lifecycle: | Obsolete |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 20 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Capacitance @ Vr, F | 1220pF @ 1V, 100kHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 450 |
8,465
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
onsemi manufactures the FFSH20120A-F155, a sic schottky diodes part used in electronic assemblies. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 30A, voltage, forward (vf) (max) @ if: 1.75 V @ 20 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 0 Days from factory. You can source FFSH20120A-F155 through Simplytronix, with fast shipping and verified authenticity.
