| Mfr. No: | FFSP0465A |
| Mfr.: | onsemi |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes Silicon Carbide (SiC) Schottky Diode - EliteSiC, 4 A, 650 V, D1, TO-220-2L Silicon Carbide (SiC) Schottky Diode - EliteSiC, 4 A, 650 V, D1, TO-220-2L |
| Datasheet: | FFSP0465A Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8.6A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
| Capacitance @ Vr, F | 258pF @ 1V, 100kHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Tube |
| Standard Pack Qty | 800 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
onsemi manufactures the FFSP0465A, a sic schottky diodes part used in electronic assemblies. Notable characteristics of this part include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 8.6A, voltage, forward (vf) (max) @ if: 1.75 V @ 4 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source FFSP0465A through Simplytronix, with fast shipping and verified authenticity.