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HGT1S10N120BNST onsemi
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HGT1S10N120BNST

Mfr. No: HGT1S10N120BNST
Mfr.: onsemi
Category: IGBTs
Description: IGBTs N-Channel IGBT NPT Series 1200V
Datasheet: HGT1S10N120BNST Datasheet (PDF)
⚙ Specifications
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 35 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298 W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2PAK)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging HGT1S10N120BNS
Suggested Replacement
8,457
Units In Stock
📦 Reel
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant By Exemption
Lifecycle Factory Special Order
Lead Time 91 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by onsemi, the HGT1S10N120BNST is classified under igbts. Notable characteristics of this part include IGBT type: NPT, voltage, collector emitter breakdown: 1200 V, current, collector (ic): 35 A, current, collector pulsed: 80 A, vce(on) (max) @ vge, ic: 2.7V @ 15V, 10A and power, max: 298 W. This part has a typical lead time of 91 Days from factory and ships with a full manufacturer datasheet available for download. Get HGT1S10N120BNST from Simplytronix, shipped same day with a genuine parts guarantee.

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