*For representation only.
KSB1366GTU
| Mfr. No: | KSB1366GTU |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT PNP Epitaxial Sil |
| Lifecycle: | Active |
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Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 5V |
| Power - Max | 2 W |
| Frequency - Transition | 9MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220F-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 50 |
7,407
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 56 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
onsemi manufactures the KSB1366GTU, a bipolar transistors - bjt part used in electronic assemblies. Technical specifications for this part include transistor type: PNP, current, collector (ic): 3 A, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 1V @ 200mA, 2A, current, collector cutoff: 100µA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 150 @ 500mA, 5V. This part has a typical lead time of 56 Days from factory. You can source KSB1366GTU through Simplytronix, with fast shipping and verified authenticity.
