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| Mfr. No: | NJVMJD47T4G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT BIP NPN 1A 250V TR |
| Datasheet: | NJVMJD47T4G Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 1.56 W |
| Frequency - Transition | 10MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | |
| Lifecycle | |
| Lead Time | 56 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
As a bipolar transistors - bjt component, the NJVMJD47T4G is manufactured and supplied by onsemi. This component is defined by transistor type: NPN, current, collector (ic): 1 A, voltage, collector emitter breakdown: 250 V, vce saturation (max) @ ib, ic: 1V @ 200mA, 1A, current, collector cutoff: 200µA and DC current gain (hfe) (min) @ ic, vce: 30 @ 300mA, 10V. This part has a typical lead time of 56 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries NJVMJD47T4G in stock, backed by a genuine parts guarantee and quick dispatch.
