*For representation only.
NSVBC856BM3T5G
| Mfr. No: | NSVBC856BM3T5G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT SS XSTR PNP |
| Lifecycle: | Active |
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Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Power - Max | 265 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | SOT-723 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 8000 |
10,283
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 364 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
onsemi's NSVBC856BM3T5G is a widely used bipolar transistors - bjt part in electronic designs. Notable characteristics of this part include transistor type: PNP, current, collector (ic): 100 mA, voltage, collector emitter breakdown: 65 V, vce saturation (max) @ ib, ic: 650mV @ 5mA, 100mA, current, collector cutoff: 15nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 220 @ 2mA, 5V. This part has a typical lead time of 364 Days from factory. Simplytronix supplies NSVBC856BM3T5G with same-day shipping and guaranteed authenticity.
