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NTBG070N120M3S onsemi
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NTBG070N120M3S

Mfr. No: NTBG070N120M3S
Mfr.: onsemi
Category: SiC MOSFETs
Description: SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3
Datasheet: NTBG070N120M3S Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.4V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
FET Feature -
Power Dissipation (Max) 172W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,994
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 245 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a sic mosfets component, the NTBG070N120M3S is manufactured and supplied by onsemi. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 36A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 87mOhm @ 15A, 18V. This part has a typical lead time of 245 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries NTBG070N120M3S in stock, backed by a genuine parts guarantee and quick dispatch.

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