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NTMT045N065SC1 onsemi
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NTMT045N065SC1

Mfr. No: NTMT045N065SC1
Mfr.: onsemi
Category: SiC MOSFETs
Description: SiC MOSFETs SIC MOS PQFN88 650V
Datasheet: NTMT045N065SC1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 4.3V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 325 V
FET Feature -
Power Dissipation (Max) 187W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 4-TDFN (8x8)
Package / Case 4-PowerTSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,072
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 231 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

NTMT045N065SC1 is a sic mosfets component manufactured by onsemi. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 55A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 50mOhm @ 25A, 18V. This part has a typical lead time of 231 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers NTMT045N065SC1 in stock, verified authentic and ready for same-day dispatch.

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