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NVBG022N120M3S-IE onsemi
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NVBG022N120M3S-IE

Mfr. No: NVBG022N120M3S-IE
Mfr.: onsemi
Category: SiC MOSFETs
Description: SiC MOSFETs SIC MOS D2PAK-7L 22MOHM M3S 1200V
Datasheet: NVBG022N120M3S-IE Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id 4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 142 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3175 pF @ 800 V
FET Feature -
Power Dissipation (Max) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,087
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The NVBG022N120M3S-IE from onsemi falls under the sic mosfets category. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 100A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 30mOhm @ 40A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. NVBG022N120M3S-IE is available through Simplytronix, sourced and verified for authenticity.

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