*For representation only.
NVBG040N120M3S-IE
| Mfr. No: | NVBG040N120M3S-IE |
| Mfr.: | onsemi |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SIC MOS D2PAK-7L 40MOHM M3S 1200V |
| Datasheet: | NVBG040N120M3S-IE Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
4,549
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 245 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| ECCN | EAR99 |
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Product Overview
The NVBG040N120M3S-IE from onsemi falls under the sic mosfets category. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 57A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 54mOhm @ 20A, 18V. This part has a typical lead time of 245 Days from factory and ships with a full manufacturer datasheet available for download. NVBG040N120M3S-IE is available through Simplytronix, sourced and verified for authenticity.
