*For representation only.
NVBG050N170M1
| Mfr. No: | NVBG050N170M1 |
| Mfr.: | onsemi |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SIC 1700V M1 52MO D2PAK-7 |
| Datasheet: | NVBG050N170M1 Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 76mOhm @ 35A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 2078 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 385W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
10,604
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 301 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
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Product Overview
onsemi manufactures the NVBG050N170M1, a sic mosfets part used in electronic assemblies. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 50A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 76mOhm @ 35A, 20V. This part has a typical lead time of 301 Days from factory and ships with a full manufacturer datasheet available for download. You can source NVBG050N170M1 through Simplytronix, with fast shipping and verified authenticity.
