| Mfr. No: | NVMFD6H852NLT1G |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs T8 80V LL SO8FL DS |
| Datasheet: | NVMFD6H852NLT1G Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 25.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 26µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 521pF @ 40V |
| Power - Max | 3.2W (Ta), 38W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Packaging | Reel |
| Standard Pack Qty | 1500 |
| Category | MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | 210 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
NVMFD6H852NLT1G is a mosfets part produced by onsemi for use across a range of applications. This component is defined by technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), drain to source voltage: 80V, current, continuous drain (id) @ 25°C: 7A (Ta), 25A (Tc), rds on (max) @ id, vgs: 25.5mOhm @ 10A, 10V and vgs(th) (max) @ id: 2V @ 26µA. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. Order NVMFD6H852NLT1G from Simplytronix for authenticated stock and same-day order processing.